HFS630 |
Part Number | HFS630 |
Manufacturer | SemiHow |
Description | HFS630 July 2005 HFS630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 9 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology ... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) ... |
Document |
HFS630 Data Sheet
PDF 152.10KB |
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