HFS640A - SemiHow

HFS640A N-Channel MOSFET

HFP640A_HFS640A Oct 2016 HFP640A / HFS640A 200V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 200 18 0.14 22 HFP640A TO-220 HFS640.

Features

‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 200 18 0.14 22 HFP640A TO-220 HFS640A TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current
  – Continuous (TC = 25୅)
  – Continuous (TC = 100୅)
  – Pulsed (Note 1) Gate.