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HFS634 Dec 2005 HFS634 250V N-Channel MOSFET BVDSS = 250 V RDS(on) typ ȍ ID = 8.1 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) .
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HFS630 |
SemiHow |
200V N-Channel MOSFET |
|
| 2 | HFS630A |
SemiHow |
N-Channel MOSFET |
|
| 3 | HFS640 |
SemiHow |
200V N-Channel MOSFET |
|
| 4 | HFS640A |
SemiHow |
N-Channel MOSFET |
|
| 5 | HFS644 |
SemiHow |
250V N-Channel MOSFET |
|
| 6 | HFS6N60U |
SemiHow |
N-Channel MOSFET |
|
| 7 | HFS6N65U |
SemiHow |
N-Channel MOSFET |
|
| 8 | HFS6N70U |
SemiHow |
N-Channel MOSFET |
|
| 9 | HFS6N90 |
SemiHow |
N-Channel MOSFET |
|
| 10 | HFS10N60S |
SemiHow |
N-Channel MOSFET |
|
| 11 | HFS10N60U |
SemiHow |
N-Channel MOSFET |
|
| 12 | HFS10N65S |
SemiHow |
N-Channel MOSFET |
|