IPG20N10S4L-35A |
Part Number | IPG20N10S4L-35A |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)... |
Features |
• Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N10S4L-35A Product Summary VDS RDS(on),max4) ID 100 V 35 mΩ 20 A PG-TDSON-8-10 Type IPG20N10S4L-35A Package PG-TDSON-8-10 Marking 4N10L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanc... |
Document |
IPG20N10S4L-35A Data Sheet
PDF 191.07KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPG20N10S4L-35 |
Infineon |
Power-Transistor | |
2 | IPG20N10S4L-22 |
Infineon Technologies |
Power-Transistor | |
3 | IPG20N10S4L-22A |
Infineon |
Power-Transistor | |
4 | IPG20N10S4-36A |
Infineon |
Power-Transistor | |
5 | IPG20N04S4-08 |
Infineon |
Power Transistor |