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BAW56LT3G |
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| Part Number | BAW56LT3G |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G Dual Switching Diode Common Anode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site a... |
| Features |
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) VR IF IFM(surge) IFSM 70 200 500 4 V mA mA A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board PD 225 mW (Note 1) TA = 25°C Derate above 25°C 1.8 mW/°C Therm... |
| Document |
 BAW56LT3G Data Sheet
PDF 94.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BAW56LT3 |
ON Semiconductor |
(BAW56LT1 / BAW56LT3) Monolithic Dual Switching Diode Common Anode |
|
| 2 | BAW56LT1 |
Motorola |
Monolithic Dual Switching Diode Common Anode |
|
| 3 | BAW56LT1 |
ON |
Monolithic Dual Switching Diode Common Anode |
|
| 4 | BAW56LT1 |
Leshan Radio Company |
Monolithic Dual Switching Diode Common Anode |
|
| 5 | BAW56LT1G |
ON Semiconductor |
Dual Switching Diode Common Anode |
|