BSM200GB170DLC |
Part Number | BSM200GB170DLC |
Manufacturer | eupec |
Description | Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor... |
Features |
Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
IC = 200A, VGE = 15V, Tvj = 25°C IC = 200A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung gate threshold voltage
IC = 9mA, VCE = VGE, Tvj = 25°C
Gateladung gate charge
VGE = -15V ... +15V
Eingangskapazität input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität reverse transfer capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Kollektor-Emitter Reststrom collector-emitter cut-off current
VCE = 1700V, VGE = 0V, Tvj = 25°C
Gate-Emitter Reststrom gate-emitter leakage current
... |
Document |
BSM200GB170DLC Data Sheet
PDF 148.56KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM200GB120 |
Siemens Semiconductor Group |
IGBT | |
2 | BSM200GB120DL |
Siemens Semiconductor Group |
IGBT | |
3 | BSM200GB120DLC |
eupec |
IGBT | |
4 | BSM200GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM200GB60DLC |
Eupec |
IGBT Power Module |