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MT46H4M32LF |
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| Part Number | MT46H4M32LF |
| Manufacturer | Micron Technology |
| Description | ..... 8 Functional Block Diagrams ....... |
| Features |
Mobile Low-Power DDR SDRAM
MT46H8M16LF – 2 Meg x 16 x 4 Banks MT46H4M32LF – 1 Meg x 32 x 4 Banks Features • VDD/VDDQ = 1.70 –1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data; one mask per byte • Programmable burst lengths (BL): 2, 4, 8, or 16 • Concurren... |
| Document |
 MT46H4M32LF Data Sheet
PDF 3.12MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT46H128M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 2 | MT46H128M32L2 |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 3 | MT46H16M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 4 | MT46H16M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 5 | MT46H16M32LG |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|