TK39J60W |
Part Number | TK39J60W |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | MOSFETs Silicon N-Channel MOS (DTMOS) TK39J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Struct... |
Features |
(1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.9 mA)
3. Packaging and Internal Circuit
TK39J60W
1: Gate 2: Drain (Heatsink) 3: Source
TO-3P(N)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse dr... |
Document |
TK39J60W Data Sheet
PDF 240.04KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK39J60W |
INCHANGE |
N-Channel MOSFET | |
2 | TK39J60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TK39J60W5 |
INCHANGE |
N-Channel MOSFET | |
4 | TK3904LLD03 |
WILLAS |
Plastic-Encapsulate Transistors | |
5 | TK3904NND03 |
WILLAS |
Plastic-Encapsulate Transistors |