TK3A65D |
Part Number | TK3A65D |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK3A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.93 Ω (typ.) (2) High forward transfer admittan... |
Features |
(1) Low drain-source on-resistance: RDS(ON) = 1.93 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK3A65D
1: Gate (G) 2: Drain (D) 3: Source (S)
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
650
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
3
A
Drain current (pulsed)
(Note 1)
IDP
12
... |
Document |
TK3A65D Data Sheet
PDF 238.88KB |
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