AP9412GJ Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet, en stock, prix

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AP9412GJ

Advanced Power Electronics
AP9412GJ
AP9412GJ AP9412GJ
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Part Number AP9412GJ
Manufacturer Advanced Power Electronics
Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low □ on-resistance and cost-effectiveness. The TO-252 package is unive...
Features ssipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units ℃/W ℃/W Data & specifications subject to change without notice 200509072-1/4 AP9412GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.02 30 26 4.6 16 10 7 36 20 450 295 0.9 Max. Units 6 8 2.5 1 ±100 42 1.35 V V/℃ mΩ mΩ...

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