AP9412GJ |
Part Number | AP9412GJ |
Manufacturer | Advanced Power Electronics |
Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low □ on-resistance and cost-effectiveness. The TO-252 package is unive... |
Features |
ssipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units ℃/W ℃/W
Data & specifications subject to change without notice
200509072-1/4
AP9412GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.02 30 26 4.6 16 10 7 36 20 450 295 0.9
Max. Units 6 8 2.5 1 ±100 42 1.35 V V/℃ mΩ mΩ... |
Document |
AP9412GJ Data Sheet
PDF 61.17KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP9412GH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP9412GI |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP9412GI-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP9412GP |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP9412AGH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |