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STPSC2006CW |
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| Part Number | STPSC2006CW |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a ... |
| Features |
■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in h... |
| Document |
 STPSC2006CW Data Sheet
PDF 75.08KB |
| Distributor | Stock | Price | Buy |
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