2SB1682 |
Part Number | 2SB1682 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | 2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 ○ Power Amplifier Applications ○ High-Power Switching Applications • • High-breakdown voltage: VCEO =... |
Features |
mbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT ton
IB1
Test Conditions VCB = −160 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −7 A IC = −7 A, IB = −7 mA VCE = −4 V, IC = −7 A VCE = −10 V, IC = −1 A
VCC IB1
Min ― ― −160 500 5000 ― ― ― 35
Typ. ― ― ― ― ―1 ― ―
Max −10 −10 ―V ― 5000 −3.0 V −3.0 V ― MH
Unit µA µA
z
IB2 Input
∼ −
50 V 7Ω Output
― 0.
7
―
Switching Time
Storage Time
tstg
20µs
― 1.
3
―
µs
IB1 = −IB2 = −7mA
IB2
Fall Time
tf
Duty Cycle < 1%
― 0.
7
―
1
2005-07-27
http://www.Datasheet4U.com
2SB1682
Markin... |
Document |
2SB1682 Data Sheet
PDF 452.27KB |
Distributor | Stock | Price | Buy |
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