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2SB1688 Silicon PNP Epitaxial High voltage amplifier ADE-208-975A (Z) 2nd. Edition Mar. 2001 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1688 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collecto.
• High breakdown voltage VCEO = -300V min
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SB1688
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -300 -300 -5 -50 750 150 -55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current Base to emitter voltage DC current transfer raito I EBO VBE hFE Mi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1682 |
Toshiba |
Silicon PNP Triple Diffused Type Transistor |
|
| 2 | 2SB1683 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 3 | 2SB1685 |
Sanken Electric |
Silicon PNP Epitaxial Planar Transistor |
|
| 4 | 2SB1686 |
Sanken Electric |
Silicon NPN Triple Diffused Planar Transistor |
|
| 5 | 2SB1602 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 6 | 2SB1603 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 7 | 2SB1603 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB1603 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB1603A |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SB1603A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB1604 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 12 | 2SB1604 |
INCHANGE |
PNP Transistor |
|