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IPP111N15N3G |
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| Part Number | IPP111N15N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features • N-channel, normal level • Excellent gate charge x... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification •Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package Marking PG-TO263-3 108N15N PG-TO220-3 111N15N PG-TO262-3 111N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C... |
| Document |
 IPP111N15N3G Data Sheet
PDF 732.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP111N15N3 |
Infineon |
Power-Transistor |
|
| 2 | IPP111N15N3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP110N06L |
Infineon |
Power-Transistor |
|
| 4 | IPP110N06LG |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPP110N20N3 |
Infineon |
Power-Transistor |
|