F11NM80 - STMicroelectronics

F11NM80 N-CHANNEL Power MOSFET

The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Table 1. Device summary Marking B11NM80 F11NM80 P11.

Features

www.DataSheet4U.com Type VDSS 800 V 800 V 800 V RDS(on) < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω RDS(on)
*Qg 14Ω
*nC 14Ω
*nC 14Ω
*nC 14Ω
*nC ID 11 A 11 A 11 A 11 A 3 1 STB11NM80 STF11NM80 STP11NM80 TO-247 D²PAK STW11NM80 800 V
■
■
■ Low input capacitance and gate charge Low gate input resistance Best RDS(on)
*Qg in the industry 3 1 2 3 1 2 TO-220 TO-220FP Application
■ Switching applications Figure 1. Internal schematic diagram Description The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adop.