-55°C to +125°C; Air-to-Air; 100 cycles; 10 min. dwell 1500 g’s 20-2000 Hz; 0.06 inch; 15g’s; 3 planes 40°C; 90%-95% R.H.; 56 days 100°C to 0°C; Water-to-Water; 15 cycles 2 KV to 4 KV Threshold Solder dip; Meniscograph Criteria Mass spectro. 2 x 10-8 atmos. CC/sec He MIL-STD-202, Mtd 210D, Cond. J 235°C; 30 seconds MIL-STD-883, Mtd 2004.5, Cond. A, B1 Lead .
TF (ns) Symmetry (%) Jitter (Typical) Start up Time (ms) PA R T N U M B E R I N G G U I D E F11XXCXX - Specify Frequency “Blank” = -10oC to 70oC Operating Temperature “M” = -40oC to 85oC Operating Temperature “Blank” = 40/60% Symmetry “S” = 45/55 Symmetry “25” = ±25ppm (-10 to 70C only) “50” = ±50ppm “00” = ±100ppm 2553 N. Edgington Street, Franklin Park, IL 60131 y Phone: 847.451.1000 y Fax: 847.451.7585 800-888-1499 or www.champtech.com 1 F1100C Series 5V FR-4 Surface Mount Crystal Clock Oscillators PIN 1 2 3 4 FUNCTION Tri-State Ground Output + VCC OUTPUT WAVEFORM TEST CIRCUIT DIAGRA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F1100 |
Integrated Device Technology |
RF to IF Dual Downconverting Mixer | |
2 | F1100E |
Fox Electronics |
5.0V TTL CLOCK OSCILLATOR | |
3 | F1102NBGI |
IDT |
RF to IF Dual Downconverting Mixer | |
4 | F1107 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
5 | F1108 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
6 | F1116 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
7 | F1120 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
8 | F1129 |
Renesas |
RF Amplifier | |
9 | F1129LB |
Renesas |
RF Amplifier | |
10 | F1129MB |
Renesas |
RF Amplifier | |
11 | F1139BA |
MTRONPTI |
Clock Oscillator | |
12 | F1150NBGI |
IDT |
RF to IF Dual Downconverting Mixer |