STU8NC90ZI STMicroelectronics N-channel Power MOSFET Datasheet, en stock, prix

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STU8NC90ZI

STMicroelectronics
STU8NC90ZI
STU8NC90ZI STU8NC90ZI
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Part Number STU8NC90ZI
Manufacturer STMicroelectronics (https://www.st.com/)
Description The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar...
Features OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 Free Datasheet http://www.datasheet4u.com/ STU8NC90Z/STU8NC90ZI Safe Operating Area For Max220 Safe Operat...

Document Datasheet STU8NC90ZI Data Sheet
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