IRFZ48VPBF International Rectifier Power MOSFET Datasheet, en stock, prix

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IRFZ48VPBF

International Rectifier
IRFZ48VPBF
IRFZ48VPBF IRFZ48VPBF
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Part Number IRFZ48VPBF
Manufacturer International Rectifier
Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switch...
Features ameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 72 51 290 150 1.0 ± 20 166 72 15 5.3 -55 to + 175 300 (1.6mm from case ) 10 lbf
•in (1.1N
•m) Units A W W/°C V mJ A mJ V/ns...

Document Datasheet IRFZ48VPBF Data Sheet
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