P1004BS - UNIKC

P1004BS N-Channel Enhancement Mode MOSFET

P1004BS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 11mΩ @VGS = 10V 53A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C ID 53 TC = 100 °C 34 IDM 159 Avalanche.

Features

Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 40 1.5 1.7 3 ±100 Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V , TJ = 125 °C 1 10 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 159 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 5V, ID = 8A VGS = 10V, ID = 15A VDS = 5V, ID = 15A 13 21 8 11 26 DYNAMIC Input Capacitance Ciss 1500 Output Capacitance Coss VGS = 0V, VDS = 20V, f = 1MHz 271 Reverse Transfer Capacitance Crss 196 Ga.