P1004HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 13mΩ @VGS = 10V ID 10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±24 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM.
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P1004B |
UNIKC |
N-Channel MOSFET | |
2 | P1004BD |
Niko-Sem |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | P1004BD |
UNIKC |
N-Channel Enhancement Mode MOSFET | |
4 | P1004BS |
UNIKC |
N-Channel Enhancement Mode MOSFET | |
5 | P100 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS | |
6 | P1000A |
Diotec Semiconductor |
Silicon Rectifiers | |
7 | P1000A |
Semikron International |
(P1000x) Standard silicon rectifier diodes | |
8 | P1000B |
Diotec Semiconductor |
Silicon Rectifiers | |
9 | P1000B |
Semikron International |
(P1000x) Standard silicon rectifier diodes | |
10 | P1000D |
Diotec Semiconductor |
Silicon Rectifiers | |
11 | P1000D |
Semikron International |
(P1000x) Standard silicon rectifier diodes | |
12 | P1000G |
Diotec Semiconductor |
Silicon Rectifiers |