UPA2761UGR - Renesas

UPA2761UGR MOS FIELD EFFECT TRANSISTOR

R07DS0010EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features • Low on-state resistance ⎯ RDS(on)1 = 18.5 mΩ MAX. (VGS = 10 V, ID = 9 A) ⎯ RDS(on)2 = 30 mΩ MAX. (VGS = 4.5 V, ID = 7 A) • Low Ciss: Ciss = 550 pF TYP. (VDS = 15 V, VGS = 0 V) • Small .

Features

• Low on-state resistance ⎯ RDS(on)1 = 18.5 mΩ MAX. (VGS = 10 V, ID = 9 A) ⎯ RDS(on)2 = 30 mΩ MAX. (VGS = 4.5 V, ID = 7 A)
• Low Ciss: Ciss = 550 pF TYP. (VDS = 15 V, VGS = 0 V)
• Small and surface mount package (Power SOP8)
• RoHS Compliant Ordering Information Part No. μ PA2761UGR-E1-AT ∗1 μ PA2761UGR-E2-AT ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Package Power SOP8 0.08 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C, All terminals are connected) Item Drain to Source Voltage (VGS = 0 .