UPA2766T1A - Renesas

UPA2766T1A N-channel MOSFET

The μ PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. R07DS0883EJ0102 Rev.1.02 Nov 28, 2012 Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 0.88 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 1.82 mΩ MAX. (VGS = 4.5 V, ID = 39 A) • 4.5 V Gate-drive available • Thin type surface mount .

Features

• VDSS = 30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 0.88 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 1.82 mΩ MAX. (VGS = 4.5 V, ID = 39 A)
• 4.5 V Gate-drive available
• Thin type surface mount package with heat spreader
• Halogen free 8-pin HVSON(6051) Ordering Information Part No. LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON(6051) 0.1 g TYP. μ PA2766T1A-E2-AY∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Cu.