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RJK5032DPH-E0 |
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| Part Number | RJK5032DPH-E0 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching R07DS1039EJ0100 Rev.1.00 Mar 15, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature... |
| Document |
 RJK5032DPH-E0 Data Sheet
PDF 122.81KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK5032DPD |
Renesas |
MOS FET |
|
| 2 | RJK5030DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 3 | RJK5030DPP-M0 |
Renesas |
High Speed Power Switching |
|
| 4 | RJK5031DPD |
Renesas |
N-Channel Power MOSFET |
|
| 5 | RJK5033DPD |
Renesas |
N-Channel Power MOSFET |
|