AUIRF7303Q |
Part Number | AUIRF7303Q |
Manufacturer | International Rectifier |
Description | Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit c... |
Features |
l l l l l l l l
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 8 7
Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*
D1 D1 D2 D2
V(BR)DSS RDS(on) max. ID
30V 0.05Ω 5.3A
3 4
6 5
Top View
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HE... |
Document |
AUIRF7303Q Data Sheet
PDF 241.36KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AUIRF7303Q |
Infineon |
Dual N-Channel MOSFET | |
2 | AUIRF7304Q |
Infineon |
Dual P-Channel MOSFET | |
3 | AUIRF7304Q |
International Rectifier |
Power MOSFET | |
4 | AUIRF7309Q |
Infineon |
Dual N/P-Channel MOSFET | |
5 | AUIRF7309Q |
International Rectifier |
Power MOSFET |