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BUZ31 |
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| Part Number | BUZ31 |
| Manufacturer | Comset Semiconductors |
| Description | SEMICONDUCTORS BUZ31 POWER MOS TRANSISTORS FEATURE • • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAR EAS VGS... |
| Features |
TRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VDSS VGS(th) IDSS IGSS RDS(on)
Ratings
Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance
Test Condition(s)
ID= 250 µA, VGS= 0 V ID=1 mA, VGS= VDS VDS= 200 V, VGS= 0 V Tj= 25 °C VDS= 200 V, VGS= 0 V Tj= 125 °C VGS= 20 V, VDS= 0 V ID= 9 A, VGS= 10 V
Min
200 2.1 -
Typ
3 0.1 1 10 0.16
Max
4 1
Unit
V V µA
100 100 0.2 nA Ω
DYNAMIC CHARACTERISTICS Symbol
gfs CISS COSS CRSS td(on) tr td(off) tf
Ratings
Transconductance Input Capacitance Outpu... |
| Document |
 BUZ31 Data Sheet
PDF 156.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ305 |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ305 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | BUZ307 |
Siemens Semiconductor Group |
Power Transistor |
|
| 4 | BUZ307 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | BUZ308 |
Siemens Semiconductor Group |
Power Transistor |
|