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RD02MUS1B |
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| Part Number | RD02MUS1B |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | < Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin... |
| Features |
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz)
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
www.DataSheet.net/
APPLICATION
For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the follo... |
| Document |
 RD02MUS1B Data Sheet
PDF 492.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD02MUS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 2 | RD02MUS2 |
Mitsubishi Electric |
RoHS Compliance |
|
| 3 | RD02LUS2 |
Mitsubishi |
Silicon RF Power MOS FET |
|
| 4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance |
|