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VBT3045BP |
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| Part Number | VBT3045BP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | VBT3045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A FEATURES TMBS® TO-263AB K • Trench ... |
| Features |
TMBS®
TO-263AB
K
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • TJ 200 °C max. in solar bypass application • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTCS IF(DC) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max. (DC forward current) 30 A... |
| Document |
 VBT3045BP Data Sheet
PDF 141.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VBT3045BP-M3 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
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| 2 | VBT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
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| 3 | VBT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier |
|
| 4 | VBT3045CBP-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 5 | VBT3045CBP-M3 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|