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VFT2045CBP |
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| Part Number | VFT2045CBP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.DataSheet.co.kr New Product VFT2045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® ITO-220A... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT2045CBP PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TOP max. 2 x 10 A 45 V 160 A 0.41 V 150 °C MECHANICAL DATA Case: I... |
| Document |
 VFT2045CBP Data Sheet
PDF 138.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VFT2045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VFT2045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VFT2045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 4 | VFT2060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VFT2060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|