IXFT68N20 |
Part Number | IXFT68N20 |
Manufacturer | IXYS Corporation |
Description | www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) IXFH/IXFT 68N20 IXFH/IXFT 74N20 200 V 68 A 35 mW 200 V 74 A 30 mW tr... |
Features |
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low
rated package inductance - easy to drive and to protect Fast intrinsic Rectifier
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 6
1.13/10 Nm/lb.in.
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 30 35 V V nA mA mA mW mW DC-DC converters Synchronous rectification Battery chargers Switched-mode and reson... |
Document |
IXFT68N20 Data Sheet
PDF 188.96KB |
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