IXFT60N65X2HV - IXYS

IXFT60N65X2HV Power MOSFET

X2-Class HiPerFETTM Power MOSFET IXFT60N65X2HV VDSS = ID25 = RDS(on) 650V 60A 52m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited.

Features

 High Voltage Package
 Low RDS(ON) and QG
 Avalanche Rated
 Low Package Inductance Advantages
 High Power Density
 Easy to Mount
 Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5
• ID25, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved Characteristic Values Min. Typ. Max. 650 V 3.5 5.0 V 100 nA 25 A 2.5 mA 52 m Applications
 Switch-Mode and Resonant-Mode Power Supplies .