Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-264 TO-247 TO-264 TO-268 Test Conditions TJ = 25°C to .
• Low gate charge
• International standard packages
• Epoxy meet UL 94 V-0, flammability classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier Advantages
• Easy to mount
• Space savings
• High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2 4 ±200 TJ = 25°C TJ = 125°C 50 1 V V nA mA mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFT60N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFT60N20F |
IXYS Corporation |
HiPerRFTM Power MOSFETs | |
3 | IXFT60N50P3 |
IXYS Corporation |
Polar3 HiperFET Power MOSFET | |
4 | IXFT60N65X2HV |
IXYS |
Power MOSFET | |
5 | IXFT66N20Q |
IXYS Corporation |
HiPerFET Power MOSFETs Q-Class | |
6 | IXFT68N20 |
IXYS Corporation |
Power MOSFET | |
7 | IXFT6N100F |
IXYS Corporation |
Power MOSFETs | |
8 | IXFT6N100F |
IXYS Corporation |
Power MOSFETs | |
9 | IXFT10N100 |
IXYS |
Power MOSFETs | |
10 | IXFT120N15P |
IXYS Corporation |
Polar MOSFETs | |
11 | IXFT12N100 |
IXYS |
Power MOSFETs | |
12 | IXFT12N100F |
IXYS Corporation |
HiPerRF Power MOSFETs |