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VFT3060G |
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| Part Number | VFT3060G |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com VT3060G, VFT3060G, VBT3060G, VIT3060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TO-220AB TMBS ® ITO-220... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse batt... |
| Document |
 VFT3060G Data Sheet
PDF 151.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VFT3060C |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VFT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VFT3060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VFT30-28 |
Advanced Semiconductor |
VHF POWER MOSFET |
|
| 5 | VFT30-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode |
|