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VB20120SG |
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| Part Number | VB20120SG |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.DataSheet.co.kr New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® T... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20120SG PIN 1 PIN 2 CASE 3 1 VF20120SG PIN 1 PIN 2 2 3 1 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse ... |
| Document |
 VB20120SG Data Sheet
PDF 218.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB20120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
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| 2 | VB20120S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
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| 3 | VB20120SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
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| 4 | VB20120SG-M3 |
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High-Voltage Trench MOS Barrier Schottky Rectifier |
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| 5 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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