Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
GB100TS60NPBF |
Click to view a larger image
| Part Number | GB100TS60NPBF |
| Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
| Description | www.DataSheet.co.kr GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized f... |
| Features |
• Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient INT-A-PAK • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C 600 V 108 A 2.6 V • Compliant to RoHS directive 2002/95/EC • Designed for industrial level BENEFITS • Benchmark efficiency for UPS and welding application • Rugged transien... |
| Document |
 GB100TS60NPBF Data Sheet
PDF 263.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor |
|
| 2 | GB10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | GB10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT |
|
| 4 | GB10MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode |
|
| 5 | GB10NB37LZ |
ST Microelectronics |
internally clamped IGBT |
|