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K9HCG08U1D |
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| Part Number | K9HCG08U1D |
| Manufacturer | Samsung semiconductor |
| Description | Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state ... |
| Features |
• Voltage Supply - 3.3V Device : 2.7V ~ 3.6V • Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit • Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte • Page Read Operation - Page Size : (4K + 218)Byte - Random Read : 60µs(Max.) - Serial Access : 30ns(Min.) *K9XDG08U5D: 50ns(Min.) • Memory Cell : 2bit / Memory Cell • Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Trans... |
| Document |
 K9HCG08U1D Data Sheet
PDF 1.68MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K9HCG08U1E |
Samsung |
16Gb E-die NAND Flash |
|
| 2 | K9HCG08U1M |
Samsung Electronics |
FLASH MEMORY |
|
| 3 | K9HCG08U5D |
Samsung |
FLASH MEMORY |
|
| 4 | K9HAG08U1M |
Samsung |
Flash Memory |
|
| 5 | K9HBG08U1M |
Samsung Electronics |
Flash Memory |
|