K9HCG08U1M - Samsung Electronics

K9HCG08U1M FLASH MEMORY

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,224-byte page and an erase operation can be performed in typical 1.5ms on a (512K+16K)byte block. Data in the data r.

Features

• Voltage Supply : 2.7 V ~ 3.6 V
• Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit
• Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte
• Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max.) - Serial Access : 25ns(Min.)
*K9MDG08U5M: 50ns(Min.)
• Memory Cell : 2bit / Memory Cell
• Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection - Program/Erase Lockout During Power Transitions
• Reliabl.