K9HAG08U1M - Samsung

K9HAG08U1M Flash Memory

Offered in 1Gx8bit, the K9L8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 950µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data r.

Features

• Voltage Supply : 2.7 V ~ 3.6 V
• Organization - Memory Cell Array : (1G+ 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit
• Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte
• Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 50µs(Max.) - Serial Access : 30ns(Min.)
*K9MBG08U5M : 50ns(Min.)
• Memory Cell : 2bit / Memory Cell
• Fast Write Cycle Time - Program time : 950µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection - Program/Erase Lockout During Power Transitions
• Reliab.