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2SB1462 |
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| Part Number | 2SB1462 |
| Manufacturer | Panasonic Semiconductor |
| Description | Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216 1.6±0.15 Unit: mm s Features q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. ... |
| Features |
q q
0.4
0.8±0.1
0.4
High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.45±0.1 0.3
0.75±0.15
Ratings –60 –50 –7 –200 –100 125 125 –55 ~ +125 Unit V V V mA... |
| Document |
 2SB1462 Data Sheet
PDF 41.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1462L |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1463 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 3 | 2SB1464 |
Panasonic |
PNP Transistor |
|
| 4 | 2SB1465 |
Renesas |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 5 | 2SB1467 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|