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TBB1017 |
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| Part Number | TBB1017 |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | TBB1017 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1469-0100 Rev.1.00 Aug 07, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts... |
| Features |
• • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction. Suitable for World Standard Tuner RF amplifier. High gain Low noise Low output capacitance Power supply voltage: 5 V Outline RENESAS Package code: PTSP0006JA-A (Package name: CMPAK-6) 5 4 6 2 1 3 1. Drain(1) 2. Source 3. Gate-1(1) 4. Gate-1(2) 5. Gate-2 6. Drain(2) Notes: 1. Marking is “SM“. 2. TBB1017 is individual type number of Renesas TWIN BBFET. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage... |
| Document |
 TBB1017 Data Sheet
PDF 271.03KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TBB1010 |
Renesas Technology |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
|
| 2 | TBB1012 |
Renesas Technology |
Twin Built in Biasing Circuit MOS FET IC |
|
| 3 | TBB1016 |
Renesas Technology |
Twin Built in Biasing Circuit MOSFET |
|
| 4 | TBB1002 |
HITACHI |
Twin Build in Biasing Circuit MOS FET |
|
| 5 | TBB1004 |
Hitachi Semiconductor |
Twin Build in Biasing Circuit MOS FET IC |
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