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IXFK200N10P |
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| Part Number | IXFK200N10P |
| Manufacturer | IXYS |
| Description | Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N10P IXFK 200N10P IXFX 200N10P VDSS ID25 RDS(on) = 100 V = 200 A = 7.5 mΩ Symbo... |
| Features |
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C = Collector Tab = Collector
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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RDS(on)
VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Easy to mount Space savings High power density
DS99239B(03/05)
© 2005 IXYS All rights reserved
IXFK 200N10P
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 60 97 7600 VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 860 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 ... |
| Document |
 IXFK200N10P Data Sheet
PDF 132.03KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
| 1 | IXFK20N120 |
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| 2 | IXFK20N120P |
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