IS42S16160B |
Part Number | IS42S16160B |
Manufacturer | Integrated Silicon Solution |
Description | A0-A12 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column A... |
Features |
• Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge www.DataSheet4U.com • Internal bank OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows. for hiding row access/precharge VDDQ VDD 3.3V 3.3V 3.3V 3.3V • Power supply IS42S83200B 54-pin TSOPII IS42S16160B 54-pin TSOPII 54-ball BGA IS42S83200B IS42S16160B • LVTTL interface 8M x 8 x 4 Banks 4M x16x4 Banks • Programmable burst len... |
Document |
IS42S16160B Data Sheet
PDF 707.77KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IS42S16160 |
Integrated Silicon Solution |
16Meg x16 256-MBIT SYNCHRONOUS DRAM | |
2 | IS42S16160C |
ISSI |
256Mb Single Data Rate Synchronous DRAM | |
3 | IS42S16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM | |
4 | IS42S16160G |
ISSI |
256Mb SYNCHRONOUS DRAM | |
5 | IS42S16160J |
ISSI |
256Mb SYNCHRONOUS DRAM |