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IS41LV16100 |
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| Part Number | IS41LV16100 |
| Manufacturer | Integrated Silicon Solution |
| Description | The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode all... |
| Features |
• TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden — Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: — 5V ± 10% (IS41C16100) — 3.3V ± 10% (IS41LV16100) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40oC to 85oC • Lead-free available www.DataSheet4U.com ISSI December 2005 ® DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices off... |
| Document |
 IS41LV16100 Data Sheet
PDF 207.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS41LV16100A |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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| 2 | IS41LV16100B |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
|
| 3 | IS41LV16100S |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
|
| 4 | IS41LV16105 |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
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| 5 | IS41LV16105B |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
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