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2SC4758 |
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| Part Number | 2SC4758 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
ss otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
COB
Output Capacitance
IE=0 ; VCB=10V;ftest=1.0MHz
Switching times, Resistive load
tstg
Storage... |
| Document |
 2SC4758 Data Sheet
PDF 191.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4754 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC4755 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 3 | 2SC4755 |
Guangdong Kexin |
Silicon NPN Transistor |
|
| 4 | 2SC4757 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SC4759 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|