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BLD6G22L-50 |
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| Part Number | BLD6G22L-50 |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at... |
| Features |
Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: Average output power = 8 W Power gain = 13.3 dB Efficiency = 38 % Fully optimized integrated Doherty concept: integrated asymmetrical power splitter at input integrated power combiner peak biasing down to 0 V low junction temperature high efficiency
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Integrated ESD protection Good pair match (main and peak on the same chip) Independent control of main and peak bias Internally matched ... |
| Document |
 BLD6G22L-50 Data Sheet
PDF 144.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLD6G22L-50 |
Ampleon |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
|
| 2 | BLD6G22LS-50 |
NXP Semiconductors |
W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor |
|
| 3 | BLD6G22LS-50 |
Ampleon |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
|
| 4 | BLD6G21L-50 |
NXP Semiconductors |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
|
| 5 | BLD6G21LS-50 |
NXP Semiconductors |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
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