STT2604 |
Part Number | STT2604 |
Manufacturer | SeCoS Halbleitertechnologie GmbH |
Description | The STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2604 is universally used for all commercial-i... |
Features |
* Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package
D D 5 S 4
D
6
REF. A A1 A2 c D E E1
Date Code
2604
G
1 D 2 D 3 G
S
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute Maximum Ratings
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Parameter
Symbol
VDS VGS
Ratings
30
± 20
Unit
V V A A A W
W/ C
o o
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,[email protected] Continuous Drain Current,[email protected] Pulsed Drain Current
... |
Document |
STT2604 Data Sheet
PDF 634.93KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STT2602 |
SeCoS Halbleitertechnologie GmbH |
N-Channel Enhancement Mode Power MosFET | |
2 | STT2603 |
SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power MosFET | |
3 | STT2605 |
SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power MosFET | |
4 | STT2605-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
5 | STT2622 |
SeCoS Halbleitertechnologie GmbH |
N-Channel Enhancement Mode Power MosFET |