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IRHNB7Z60 |
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| Part Number | IRHNB7Z60 |
| Manufacturer | International Rectifier |
| Description | PD - 91754A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number IRHNB7Z60 IRHNB3Z60 IRHNB4Z60 IRHNB8Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K... |
| Features |
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Pre-Irradiation
Units
75* 75* 300 300 2.4 ±20 500 75 30 0.35 -55 to 150 300 ( for 5 sec.) 3.3 (Typical )
Parameter
Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor... |
| Document |
 IRHNB7Z60 Data Sheet
PDF 154.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRHNB7064 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
| 2 | IRHNB7160 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
| 3 | IRHNB7260 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
| 4 | IRHNB7264SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
| 5 | IRHNB7360SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|