RJK2055DPA |
Part Number | RJK2055DPA |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | RJK2055DPA Silicon N Channel MOS FET High Speed Power Switching REJ03G1735-0100 Rev.1.00 Sep 16, 2008 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package... |
Features |
• Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) www.DataSheet4U.com Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, d... |
Document |
RJK2055DPA Data Sheet
PDF 106.35KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK2054DPC |
Renesas |
N-Channel Power MOSFET | |
2 | RJK2057DPA |
Renesas |
Silicon N Channel MOS FET | |
3 | RJK2006DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
4 | RJK2006DPE |
INCHANGE |
N-Channel MOSFET | |
5 | RJK2006DPF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |