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K6T2008S2M |
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| Part Number | K6T2008S2M |
| Manufacturer | Samsung Semiconductor |
| Description | The K6T2008S2M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and various package type for user flexibility of system ... |
| Features |
• Process Technology: TFT • Organization: 256Kx8 • Power Supply Voltage K6T2008S2M Family: 2.3~2.7V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F CMOS SRAM GENERAL DESCRIPTION The K6T2008S2M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 256Kx8 bit Low Po... |
| Document |
 K6T2008S2M Data Sheet
PDF 166.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K6T2008S2A |
Samsung Semiconductor |
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
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| 2 | K6T2008U2A |
Samsung semiconductor |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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| 3 | K6T2008V2A |
Samsung semiconductor |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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| 4 | K6T0808C1D |
Samsung semiconductor |
CMOS SRAM |
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| 5 | K6T0808U1D |
Samsung semiconductor |
CMOS SRAM |
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