IRF8707PBF |
Part Number | IRF8707PBF |
Manufacturer | International Rectifier |
Description | The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous... |
Features |
om applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 11 9.1 88 2.5 1.6 0.02 -55 to + 150
Units
V
c
A
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
W W/°C °C
Thermal Resistance
RθJL RθJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
– – – – – – Max. 20 50 Units °C/W Notes through... |
Document |
IRF8707PBF Data Sheet
PDF 284.79KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF8707GPbF |
International Rectifier |
Power MOSFET | |
2 | IRF8714GPbF |
International Rectifier |
Power MOSFET | |
3 | IRF8714PBF |
International Rectifier |
Power MOSFET | |
4 | IRF8714PBF-1 |
International Rectifier |
Power MOSFET | |
5 | IRF8721GPbF |
International Rectifier |
Power MOSFET |