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LE28C1001M |
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| Part Number | LE28C1001M |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a ... |
| Features |
• Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby current: 20 µA (maximum) • Highly reliable read/write — Erase/write cycles: 104/103 cycles — Data retention: 10 years • Address and data latches • Fast page rewrite operation — 128 bytes per page — Byte/page rewrite time: 5 ms (typical) — Chip rewrite time: 5 s (typical) • Automatic rewriting using internally generated Vpp • Rewrite complete detect... |
| Document |
 LE28C1001M Data Sheet
PDF 281.06KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LE28C1001T |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory |
|
| 2 | LE28C1001T-12 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory |
|
| 3 | LE28C1001T-15 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory |
|
| 4 | LE28C1001T-90 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory |
|
| 5 | LE28CV1001M |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory |
|